Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI7911DN-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2P-CH 20V 4.2A 1212-8
Product Attributes:
Part Number: SI7911DN-T1-GE3
Manufacturer: Vishay
Description: MOSFET 2P-CH 20V 4.2A 1212-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
SI7911DN-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 120NH 250MA 300MOHM SM
ADJ PWR RES 6.8 OHM 42W CHAS MT
IC SWITCH QUAD SPST 16SOIC
FIXED IND 270NH 450MA 450MOHM SM
DIODE GEN PURP 600V 1A DO204AL
TVS DIODE 51VWM 82.4VC DO204AC
Product Specifications:
MfrPart.: SI7911DN-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET 2P-CH 20V 4.2A 1212-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: 2 P-Channel (Dual)FETFeature: Logic Level GateDraintoSourceVoltage(Vdss): 20VCurrent-ContinuousDrain(Id)@25°C: 4.2ARdsOn(Max)@IdVgs: 51mOhm @ 5.7A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 15nC @ 4.5VInputCapacitance(Ciss)(Max)@Vds: -Power-Max: 1.3WOperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountPackage/Case: PowerPAK® 1212-8 DualSI7911DN-T1-GE3 | Vishay | NHE Electronics
SI7911DN-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.