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    SI7960DP-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 60V 6.2A PPAK SO-8
    SI7960DP-T1-E3 Images
    SI7960DP-T1-E3 Images
    Product Attributes：
  • Part Number: SI7960DP-T1-E3
  • Manufacturer: Vishay
  • Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • SI7960DP-T1-E3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SI7960DP-T1-E3
  • Mfr: Vishay Siliconix
  • Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET®
  • PartStatus: Obsolete
  • FETType: 2 N-Channel (Dual)
  • FETFeature: Logic Level Gate
  • DraintoSourceVoltage(Vdss): 60V
  • Current-ContinuousDrain(Id)@25°C: 6.2A
  • RdsOn(Max)@IdVgs: 21mOhm @ 9.7A, 10V
  • Vgs(th)(Max)@Id: 3V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 75nC @ 10V
  • InputCapacitance(Ciss)(Max)@Vds: -
  • Power-Max: 1.4W
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: PowerPAK® SO-8 Dual
  • SI7960DP-T1-E3 | Vishay | NHE Electronics
    • SI7960DP-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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