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SI7960DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 60V 6.2A PPAK SO-8
Product Attributes：
Part Number: SI7960DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET 2N-CH 60V 6.2A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
SI7960DP-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI7960DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET 2N-CH 60V 6.2A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: 2 N-Channel (Dual)FETFeature: Logic Level GateDraintoSourceVoltage(Vdss): 60VCurrent-ContinuousDrain(Id)@25°C: 6.2ARdsOn(Max)@IdVgs: 21mOhm @ 9.7A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 75nC @ 10VInputCapacitance(Ciss)(Max)@Vds: -Power-Max: 1.4WOperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountPackage/Case: PowerPAK® SO-8 DualSI7960DP-T1-GE3 | Vishay | NHE Electronics
SI7960DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
