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    SI8469DB-T2-E1, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 8V 4.6A 4MICROFOOT
    SI8469DB-T2-E1 Images
    SI8469DB-T2-E1 Images
    Product Attributes：
  • Part Number: SI8469DB-T2-E1
  • Manufacturer: Vishay
  • Description: MOSFET P-CH 8V 4.6A 4MICROFOOT
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • SI8469DB-T2-E1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SI8469DB-T2-E1
  • Mfr: Vishay Siliconix
  • Description: MOSFET P-CH 8V 4.6A 4MICROFOOT
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET®
  • PartStatus: Obsolete
  • FETType: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 8 V
  • Current-ContinuousDrain(Id)@25°C: 4.6A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 4.5V
  • RdsOn(Max)@IdVgs: 64mOhm @ 1.5A, 4.5V
  • Vgs(th)(Max)@Id: 800mV @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 17 nC @ 4.5 V
  • Vgs(Max): ±5V
  • InputCapacitance(Ciss)(Max)@Vds: 900 pF @ 4 V
  • FETFeature: -
  • PowerDissipation(Max): 780mW (Ta), 1.8W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: 4-Microfoot
  • SI8469DB-T2-E1 | Vishay | NHE Electronics
    • SI8469DB-T2-E1 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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