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SI8481DB-T1-E1, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 9.7A 4MICRO FOOT
Product Attributes：
Part Number: SI8481DB-T1-E1
Manufacturer: Vishay
Description: MOSFET P-CH 20V 9.7A 4MICRO FOOT
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI8481DB-T1-E1 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI8481DB-T1-E1Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 9.7A 4MICRO FOOTProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IIIPartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 9.7A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 21mOhm @ 3A, 4.5VVgs(th)(Max)@Id: 900mV @ 250µAGateCharge(Qg)(Max)@Vgs: 47 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 2500 pF @ 10 VFETFeature: -PowerDissipation(Max): 2.8W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 4-MICRO FOOT® (1.6x1.6)SI8481DB-T1-E1 | Vishay | NHE Electronics
SI8481DB-T1-E1 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
