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SI8497DB-T2-E1, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 13A 6MICROFOOT
Product Attributes:
Part Number: SI8497DB-T2-E1
Manufacturer: Vishay
Description: MOSFET P-CH 30V 13A 6MICROFOOT
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI8497DB-T2-E1 Datasheet (PDF)
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Product Specifications:
MfrPart.: SI8497DB-T2-E1Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 13A 6MICROFOOTProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 13A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2V, 4.5VRdsOn(Max)@IdVgs: 53mOhm @ 1.5A, 4.5VVgs(th)(Max)@Id: 1.1V @ 250µAGateCharge(Qg)(Max)@Vgs: 49 nC @ 10 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 1320 pF @ 15 VFETFeature: -PowerDissipation(Max): 2.77W (Ta), 13W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 6-microfootSI8497DB-T2-E1 | Vishay | NHE Electronics
SI8497DB-T2-E1 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.