Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI8805EDB-T2-E1, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 8V 4MICROFOOT
Product Attributes：
Part Number: SI8805EDB-T2-E1
Manufacturer: Vishay
Description: MOSFET P-CH 8V 4MICROFOOT
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI8805EDB-T2-E1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ZENER 24V 1.25W DO214AC
TVS DIODE 10.2VWM 16.7VC DO221AC
DIODE GEN PURP 600V 8A TO263AB
BRIDGE RECT 1PHASE 800V 3A GBU
FIXED IND 8.2UH 155MA 2.7 OHM TH
IC ANALOG SWITCH DUAL 10MSOP
Product Specifications：
MfrPart.: SI8805EDB-T2-E1Mfr: Vishay SiliconixDescription: MOSFET P-CH 8V 4MICROFOOTProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 8 VCurrent-ContinuousDrain(Id)@25°C: 2.2A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.2V, 4.5VRdsOn(Max)@IdVgs: 68mOhm @ 1.5A, 4.5VVgs(th)(Max)@Id: 700mV @ 250µAGateCharge(Qg)(Max)@Vgs: 10 nC @ 4.5 VVgs(Max): ±5VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 500mW (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 4-MicrofootSI8805EDB-T2-E1 | Vishay | NHE Electronics
SI8805EDB-T2-E1 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
