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SI8817DB-T2-E1, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 4MICROFOOT
Product Attributes：
Part Number: SI8817DB-T2-E1
Manufacturer: Vishay
Description: MOSFET P-CH 20V 4MICROFOOT
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI8817DB-T2-E1 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI8817DB-T2-E1Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 4MICROFOOTProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 2.1A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.5V, 4.5VRdsOn(Max)@IdVgs: 76mOhm @ 1A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 19 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 615 pF @ 10 VFETFeature: -PowerDissipation(Max): 500mW (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 4-MicrofootSI8817DB-T2-E1 | Vishay | NHE Electronics
SI8817DB-T2-E1 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
