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    SI8819EDB-T2-E1, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 12V 2.9A 4MICRO FOOT
    SI8819EDB-T2-E1 Images
    SI8819EDB-T2-E1 Images
    Product Attributes：
  • Part Number: SI8819EDB-T2-E1
  • Manufacturer: Vishay
  • Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • SI8819EDB-T2-E1 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SI8819EDB-T2-E1
  • Mfr: Vishay Siliconix
  • Description: MOSFET P-CH 12V 2.9A 4MICRO FOOT
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • FETType: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 12 V
  • Current-ContinuousDrain(Id)@25°C: 2.9A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 1.5V, 3.7V
  • RdsOn(Max)@IdVgs: 80mOhm @ 1.5A, 3.7V
  • Vgs(th)(Max)@Id: 900mV @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 17 nC @ 8 V
  • Vgs(Max): ±8V
  • InputCapacitance(Ciss)(Max)@Vds: 650 pF @ 6 V
  • FETFeature: -
  • PowerDissipation(Max): 900mW (Ta)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: 4-MICRO FOOT® (0.8x0.8)
  • SI8819EDB-T2-E1 | Vishay | NHE Electronics
    • SI8819EDB-T2-E1 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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