Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI8823EDB-T2-E1, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 2.7A 4MICRO FOOT
Product Attributes:
Part Number: SI8823EDB-T2-E1
Manufacturer: Vishay
Description: MOSFET P-CH 20V 2.7A 4MICRO FOOT
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI8823EDB-T2-E1 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 100V 1A DO204AC
FIXED IND 120NH 584MA 220MOHM SM
BRIDGE RECT 1PHASE 200V 3.9A GBU
DIODE ARRAY SCHOTTKY 45V D2PAK
FIXED IND 150NH 55A 0.6 MOHM SMD
TVS DIODE 20.5VWM 33.2VC DO214AA
Product Specifications:
MfrPart.: SI8823EDB-T2-E1Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 2.7A 4MICRO FOOTProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IIIPartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 2.7A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.5V, 4.5VRdsOn(Max)@IdVgs: 95mOhm @ 1A, 4.5VVgs(th)(Max)@Id: 800mV @ 250µAGateCharge(Qg)(Max)@Vgs: 10 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 580 pF @ 10 VFETFeature: -PowerDissipation(Max): 900mW (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 4-MICRO FOOT® (0.8x0.8)SI8823EDB-T2-E1 | Vishay | NHE Electronics
SI8823EDB-T2-E1 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.