Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI9435BDY-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 4.1A 8SO
Product Attributes:
Part Number: SI9435BDY-T1-E3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 4.1A 8SO
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI9435BDY-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 70.1VWM 113VC DO204AL
TVS DIODE 150VWM 243VC DO215AA
DIODE ZENER 12V 1.25W DO214AC
DIODE ZENER 4.7V 500MW SOD80
SFERNICE POTENTIOMETERS & TRIMME
DIODE SCHOTTKY 40V 5A TO277A
Product Specifications:
MfrPart.: SI9435BDY-T1-E3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 4.1A 8SOProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 4.1A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 42mOhm @ 5.7A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 24 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 1.3W (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-SOSI9435BDY-T1-E3 | Vishay | NHE Electronics
SI9435BDY-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.