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    SI9926BDY-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 20V 6.2A 8-SOIC
    SI9926BDY-T1-GE3 Images
    SI9926BDY-T1-GE3 Images
    Product Attributes：
  • Part Number: SI9926BDY-T1-GE3
  • Manufacturer: Vishay
  • Description: MOSFET 2N-CH 20V 6.2A 8-SOIC
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • SI9926BDY-T1-GE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SI9926BDY-T1-GE3
  • Mfr: Vishay Siliconix
  • Description: MOSFET 2N-CH 20V 6.2A 8-SOIC
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR)
  • Series: TrenchFET®
  • PartStatus: Obsolete
  • FETType: 2 N-Channel (Dual)
  • FETFeature: Logic Level Gate
  • DraintoSourceVoltage(Vdss): 20V
  • Current-ContinuousDrain(Id)@25°C: 6.2A
  • RdsOn(Max)@IdVgs: 20mOhm @ 8.2A, 4.5V
  • Vgs(th)(Max)@Id: 1.5V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 20nC @ 4.5V
  • InputCapacitance(Ciss)(Max)@Vds: -
  • Power-Max: 1.14W
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 8-SOIC (0.154, 3.90mm Width)
  • SI9926BDY-T1-GE3 | Vishay | NHE Electronics
    • SI9926BDY-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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