Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIA425EDJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 4.5A PPAK SC70-6
Product Attributes：
Part Number: SIA425EDJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 4.5A PPAK SC70-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIA425EDJ-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 150NH 548MA 250MOHM SM
MODULE BRIDGE CC 40A 800V D-19
DIODE ZENER 16V 1W DO213AB
MOSFET N-CH 1000V 6.1A TO247-3
DIODE GEN PURP 200V 3A DO214AB
FIXED IND 1MH 150MA 3.4 OHM SMD
Product Specifications：
MfrPart.: SIA425EDJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 4.5A PPAK SC70-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 4.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 60mOhm @ 4.2A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: -Vgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 2.9W (Ta), 15.6W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6SIA425EDJ-T1-GE3 | Vishay | NHE Electronics
SIA425EDJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
