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SIA427DJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 8V 12A PPAK SC70-6
Product Attributes：
Part Number: SIA427DJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 8V 12A PPAK SC70-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIA427DJ-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIA427DJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 8V 12A PPAK SC70-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 8 VCurrent-ContinuousDrain(Id)@25°C: 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.2V, 4.5VRdsOn(Max)@IdVgs: 16mOhm @ 8.2A, 4.5VVgs(th)(Max)@Id: 800mV @ 250µAGateCharge(Qg)(Max)@Vgs: 50 nC @ 5 VVgs(Max): ±5VInputCapacitance(Ciss)(Max)@Vds: 2300 pF @ 4 VFETFeature: -PowerDissipation(Max): 3.5W (Ta), 19W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6SIA427DJ-T1-GE3 | Vishay | NHE Electronics
SIA427DJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
