Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIA433EDJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 12A PPAK SC70-6
Product Attributes:
Part Number: SIA433EDJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 12A PPAK SC70-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIA433EDJ-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GP 1.8KV 330A DO205AB
DIODE GEN PURP 600V 8A D-PAK
TVS DIODE 28VWM 50VC DO214AA
TVS DIODE 43VWM 68.5VC DO214AA
SFERNICE POTENTIOMETERS & TRIMME
DIODE ZENER 12V 1.25W DO214AC
Product Specifications:
MfrPart.: SIA433EDJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 12A PPAK SC70-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 18mOhm @ 7.6A, 4.5VVgs(th)(Max)@Id: 1.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 75 nC @ 8 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: -FETFeature: -PowerDissipation(Max): 3.5W (Ta), 19W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6SIA433EDJ-T1-GE3 | Vishay | NHE Electronics
SIA433EDJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.