Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIA449DJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 12A PPAK SC70-6
Product Attributes:
Part Number: SIA449DJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 12A PPAK SC70-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIA449DJ-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE SCHOTTKY 30A 80V TO-263AB
TVS DIODE 110VWM 177VC DO214AA
TVS DIODE 185VWM 328VC DO214AB
TVS DIODE 23.1VWM 37.5VC DO214AC
DIODE ZENER 8.2V 200MW SOD323
TVS DIODE 5VWM 9.2VC DO204AC
Product Specifications:
MfrPart.: SIA449DJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 12A PPAK SC70-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 10VRdsOn(Max)@IdVgs: 20mOhm @ 6A, 10VVgs(th)(Max)@Id: 1.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 72 nC @ 10 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 2140 pF @ 15 VFETFeature: -PowerDissipation(Max): 3.5W (Ta), 19W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6SIA449DJ-T1-GE3 | Vishay | NHE Electronics
SIA449DJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.