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SIA456DJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 200V 2.6A PPAK SC70
Product Attributes：
Part Number: SIA456DJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 200V 2.6A PPAK SC70
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIA456DJ-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIA456DJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 200V 2.6A PPAK SC70Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 200 VCurrent-ContinuousDrain(Id)@25°C: 2.6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 1.38Ohm @ 750mA, 4.5VVgs(th)(Max)@Id: 1.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 14.5 nC @ 10 VVgs(Max): ±16VInputCapacitance(Ciss)(Max)@Vds: 350 pF @ 100 VFETFeature: -PowerDissipation(Max): 3.5W (Ta), 19W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6SIA456DJ-T1-GE3 | Vishay | NHE Electronics
SIA456DJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
