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SIA850DJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 190V 950MA PPAK
Product Attributes：
Part Number: SIA850DJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 190V 950MA PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIA850DJ-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIA850DJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 190V 950MA PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: LITTLE FOOT®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 190 VCurrent-ContinuousDrain(Id)@25°C: 950mA (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 3.8Ohm @ 360mA, 4.5VVgs(th)(Max)@Id: 1.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 4.5 nC @ 10 VVgs(Max): ±16VInputCapacitance(Ciss)(Max)@Vds: 90 pF @ 100 VFETFeature: Schottky Diode (Isolated)PowerDissipation(Max): 1.9W (Ta), 7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6 DualSIA850DJ-T1-GE3 | Vishay | NHE Electronics
SIA850DJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
