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    SIA938DJT-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, DUAL N-CHANNEL 20-V (D-S) MOSFET
    SIA938DJT-T1-GE3 Images
    SIA938DJT-T1-GE3 Images
    Product Attributes：
  • Part Number: SIA938DJT-T1-GE3
  • Manufacturer: Vishay
  • Description: DUAL N-CHANNEL 20-V (D-S) MOSFET
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • SIA938DJT-T1-GE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SIA938DJT-T1-GE3
  • Mfr: Vishay Siliconix
  • Description: DUAL N-CHANNEL 20-V (D-S) MOSFET
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET® Gen IV
  • PartStatus: Active
  • FETType: 2 N-Channel (Dual)
  • FETFeature: Standard
  • DraintoSourceVoltage(Vdss): 20V
  • Current-ContinuousDrain(Id)@25°C: 4.5A (Ta), 4.5A (Tc)
  • RdsOn(Max)@IdVgs: 21.5mOhm @ 5A, 10V
  • Vgs(th)(Max)@Id: 1.5V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 11.5nC @ 10V
  • InputCapacitance(Ciss)(Max)@Vds: 425pF @ 10V
  • Power-Max: 1.9W (Ta), 7.8W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: PowerPAK® SC-70-6 Dual
  • SIA938DJT-T1-GE3 | Vishay | NHE Electronics
    • SIA938DJT-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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