Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIAA00DJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 25V 20.1A/40A PPAK
Product Attributes:
Part Number: SIAA00DJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 25V 20.1A/40A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIAA00DJ-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 600V 4A D-PAK
SFERNICE POTENTIOMETERS & TRIMME
DIODE ZENER 15V 500MW DO35
TVS DIODE 175VWM 344VC 1.5KE
FIXED IND 5.6UH 185MA 1.8 OHM TH
TVS DIODE 58VWM 93.6VC DO214AB
Product Specifications:
MfrPart.: SIAA00DJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 25V 20.1A/40A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 25 VCurrent-ContinuousDrain(Id)@25°C: 20.1A (Ta), 40A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 5.6mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 24 nC @ 10 VVgs(Max): +16V, -12VInputCapacitance(Ciss)(Max)@Vds: 1090 pF @ 12.5 VFETFeature: -PowerDissipation(Max): 3.5W (Ta), 19.2W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6SIAA00DJ-T1-GE3 | Vishay | NHE Electronics
SIAA00DJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.