Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIAA02DJ-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 22A/52A PPAK
Product Attributes:
Part Number: SIAA02DJ-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 22A/52A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIAA02DJ-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
NTC CU 0.6 LD CODED 1K 5%
DIODE ZENER 91V 1.25W DO214AC
IC REG CTRLR HALF-BRG MLP65-20
TVS DIODE 16VWM 26VC DO214AC
ZC, 800V, DIP6, 6PIN OPTOTRIAC
DIODE ZENER 30V 1.3W DO41
Product Specifications:
MfrPart.: SIAA02DJ-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 22A/52A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 22A (Ta), 52A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 10VRdsOn(Max)@IdVgs: 4.7mOhm @ 8A, 10VVgs(th)(Max)@Id: 1.6V @ 250µAGateCharge(Qg)(Max)@Vgs: 33 nC @ 10 VVgs(Max): +12V, -8VInputCapacitance(Ciss)(Max)@Vds: 1250 pF @ 10 VFETFeature: -PowerDissipation(Max): 3.5W (Ta), 19W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-70-6SIAA02DJ-T1-GE3 | Vishay | NHE Electronics
SIAA02DJ-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.