Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIB410DK-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 30V 9A PPAK SC75-6
Product Attributes：
Part Number: SIB410DK-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 30V 9A PPAK SC75-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIB410DK-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 8.1VWM 15VC DO204AC
DIODE GEN PURP 600V 1A MPG06
FIXED IND 180UH 500MA 1.37OHM SM
DIODE ARRAY GP 100V 5A TO220AB
Product Specifications：
MfrPart.: SIB410DK-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 30V 9A PPAK SC75-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 42mOhm @ 3.8A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 15 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 560 pF @ 15 VFETFeature: -PowerDissipation(Max): 2.5W (Ta), 13W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-75-6SIB410DK-T1-GE3 | Vishay | NHE Electronics
SIB410DK-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
