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SIB412DK-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 9A PPAK SC75-6
Product Attributes：
Part Number: SIB412DK-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 9A PPAK SC75-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIB412DK-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIB412DK-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 9A PPAK SC75-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 34mOhm @ 6.6A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 10.16 nC @ 5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 535 pF @ 10 VFETFeature: -PowerDissipation(Max): 2.4W (Ta), 13W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SC-75-6SIB412DK-T1-GE3 | Vishay | NHE Electronics
SIB412DK-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
