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SIDR104AEP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, N-CHANNEL 100 V (D-S) 175C MOSFE
Product Attributes：
Part Number: SIDR104AEP-T1-RE3
Manufacturer: Vishay
Description: N-CHANNEL 100 V (D-S) 175C MOSFE
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIDR104AEP-T1-RE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIDR104AEP-T1-RE3Mfr: Vishay SiliconixDescription: N-CHANNEL 100 V (D-S) 175C MOSFEProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 21.1A (Ta), 90.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 6.1mOhm @ 15A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 70 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3250 pF @ 50 VFETFeature: -PowerDissipation(Max): 6.5W (Ta), 120W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8DCSIDR104AEP-T1-RE3 | Vishay | NHE Electronics
SIDR104AEP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
