Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIDR220DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 25V 87.7A/100A PPAK
Product Attributes：
Part Number: SIDR220DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 25V 87.7A/100A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIDR220DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 120UH 66MA 13 OHM TH
DIODE ARRAY SCHOTTKY 35V TO263AB
TVS DIODE 128VWM 207VC DO214AC
DIODE ZENER 43V 1.5W DO214AA
Product Specifications：
MfrPart.: SIDR220DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 25V 87.7A/100A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 25 VCurrent-ContinuousDrain(Id)@25°C: 87.7A (Ta), 100A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 5.8mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.1V @ 250µAGateCharge(Qg)(Max)@Vgs: 200 nC @ 10 VVgs(Max): +16V, -12VInputCapacitance(Ciss)(Max)@Vds: 1085 pF @ 10 VFETFeature: -PowerDissipation(Max): 6.25W (Ta), 125W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8DCSIDR220DP-T1-GE3 | Vishay | NHE Electronics
SIDR220DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
