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    SIDR610DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 200V 8.9A/39.6A PPAK
    SIDR610DP-T1-GE3 Images
    SIDR610DP-T1-GE3 Images
    Product Attributes：
  • Part Number: SIDR610DP-T1-GE3
  • Manufacturer: Vishay
  • Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • SIDR610DP-T1-GE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SIDR610DP-T1-GE3
  • Mfr: Vishay Siliconix
  • Description: MOSFET N-CH 200V 8.9A/39.6A PPAK
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET®
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 200 V
  • Current-ContinuousDrain(Id)@25°C: 8.9A (Ta), 39.6A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10V
  • RdsOn(Max)@IdVgs: 31.9mOhm @ 10A, 10V
  • Vgs(th)(Max)@Id: 4V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 38 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 1380 pF @ 100 V
  • FETFeature: -
  • PowerDissipation(Max): 6.25W (Ta), 125W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: PowerPAK® SO-8DC
  • SIDR610DP-T1-GE3 | Vishay | NHE Electronics
    • SIDR610DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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