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SIDR626DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 42.8A/100A PPAK
Product Attributes：
Part Number: SIDR626DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 42.8A/100A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIDR626DP-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIDR626DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 42.8A/100A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 42.8A (Ta), 100A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 1.7mOhm @ 20A, 10VVgs(th)(Max)@Id: 3.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 102 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 5130 pF @ 30 VFETFeature: -PowerDissipation(Max): 6.25W (Ta), 125W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8DCSIDR626DP-T1-GE3 | Vishay | NHE Electronics
SIDR626DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
