Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIE808DF-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 60A 10POLARPAK
Product Attributes:
Part Number: SIE808DF-T1-E3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 60A 10POLARPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIE808DF-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 3.9UH 330MA 900MOHM SM
OPTOISOLTR 5KV TRANSISTOR 6-DIP
DIODE ZENER 4.7V 300MW SOT23
POT CONDUCTIVE PLASTIC ELEMENT
DIODE SCHOTTKY 10A 45V TO-262AA
FIXED IND 10UH 16.5A 12 MOHM SMD
Product Specifications:
MfrPart.: SIE808DF-T1-E3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 60A 10POLARPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 1.6mOhm @ 25A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 155 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 8800 pF @ 10 VFETFeature: -PowerDissipation(Max): 5.2W (Ta), 125W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 10-PolarPAK® (L)SIE808DF-T1-E3 | Vishay | NHE Electronics
SIE808DF-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.