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SIE810DF-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 20V 60A 10POLARPAK
Product Attributes：
Part Number: SIE810DF-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 20V 60A 10POLARPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIE810DF-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIE810DF-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 20V 60A 10POLARPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 10VRdsOn(Max)@IdVgs: 1.4mOhm @ 25A, 10VVgs(th)(Max)@Id: 2V @ 250µAGateCharge(Qg)(Max)@Vgs: 300 nC @ 10 VVgs(Max): ±12VInputCapacitance(Ciss)(Max)@Vds: 13000 pF @ 10 VFETFeature: -PowerDissipation(Max): 5.2W (Ta), 125W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 10-PolarPAK® (L)SIE810DF-T1-GE3 | Vishay | NHE Electronics
SIE810DF-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
