Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIE816DF-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 60A 10POLARPAK
Product Attributes：
Part Number: SIE816DF-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 60A 10POLARPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIE816DF-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 300V 60A DO203AB
DIODE GEN PURP 1.4KV 800MA SOD57
DIODE SCHOTTKY 60V 1A DO219AB
BRIDGE RECT 1PHASE 800V 3.9A GBU
BRIDGE RECT 3PHASE 800V 130A MTK
Product Specifications：
MfrPart.: SIE816DF-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 60A 10POLARPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 60A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 7.4mOhm @ 19.8A, 10VVgs(th)(Max)@Id: 4.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 77 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3100 pF @ 30 VFETFeature: -PowerDissipation(Max): 5.2W (Ta), 125W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 10-PolarPAK® (L)SIE816DF-T1-GE3 | Vishay | NHE Electronics
SIE816DF-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
