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SIE836DF-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 200V 18.3A 10POLARPK
Product Attributes：
Part Number: SIE836DF-T1-E3
Manufacturer: Vishay
Description: MOSFET N-CH 200V 18.3A 10POLARPK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIE836DF-T1-E3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIE836DF-T1-E3Mfr: Vishay SiliconixDescription: MOSFET N-CH 200V 18.3A 10POLARPKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 200 VCurrent-ContinuousDrain(Id)@25°C: 18.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 130mOhm @ 4.1A, 10VVgs(th)(Max)@Id: 4.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 41 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 1200 pF @ 100 VFETFeature: -PowerDissipation(Max): 5.2W (Ta), 104W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 10-PolarPAK® (SH)SIE836DF-T1-E3 | Vishay | NHE Electronics
SIE836DF-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
