Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIE878DF-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 25V 45A 10POLARPAK
Product Attributes:
Part Number: SIE878DF-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 25V 45A 10POLARPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIE878DF-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 600V 4A DPAK
SFERNICE POTENTIOMETERS & TRIMME
DIODE ZENER 47V 1.25W DO214AC
TVS DIODE 18VWM 32.2VC P600
TVS DIODE 102VWM 165VC DO214AA
TVS DIODE 33.3VWM 53.9VC DO214AC
Product Specifications:
MfrPart.: SIE878DF-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 25V 45A 10POLARPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 25 VCurrent-ContinuousDrain(Id)@25°C: 45A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 5.2mOhm @ 20A, 10VVgs(th)(Max)@Id: 2.2V @ 250µAGateCharge(Qg)(Max)@Vgs: 36 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1400 pF @ 12.5 VFETFeature: -PowerDissipation(Max): 5.2W (Ta), 25W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 10-PolarPAK® (L)SIE878DF-T1-GE3 | Vishay | NHE Electronics
SIE878DF-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.