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SIHB11N80E-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 800V 12A D2PAK
Product Attributes：
Part Number: SIHB11N80E-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 800V 12A D2PAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHB11N80E-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIHB11N80E-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 800V 12A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: EPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 800 VCurrent-ContinuousDrain(Id)@25°C: 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 440mOhm @ 5.5A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 88 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 1670 pF @ 100 VFETFeature: -PowerDissipation(Max): 179W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: D²PAK (TO-263)SIHB11N80E-GE3 | Vishay | NHE Electronics
SIHB11N80E-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
