Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIHB12N60E-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 12A D2PAK
Product Attributes:
Part Number: SIHB12N60E-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 600V 12A D2PAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHB12N60E-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 200V 2A DO220AA
FIXED IND 15UH 150MA 2.8 OHM TH
DIODE SCHOTTKY 50V 16A TO220AC
DIODE SCHOTTKY 35V 10A TO220AC
TVS DIODE 20VWM 32.4VC DO214AB
FIXED IND 22UH 2.2A 50 MOHM TH
Product Specifications:
MfrPart.: SIHB12N60E-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 600V 12A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: BulkSeries: -PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 380mOhm @ 6A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 58 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 937 pF @ 100 VFETFeature: -PowerDissipation(Max): 147W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: D2PAKSIHB12N60E-GE3 | Vishay | NHE Electronics
SIHB12N60E-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.