Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIHB35N60EF-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 32A D2PAK
Product Attributes:
Part Number: SIHB35N60EF-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 600V 32A D2PAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHB35N60EF-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
THERMISTOR NTC 8KOHM 3500K 0805
TVS DIODE 7VWM 12VC DO214AA
FIXED IND 1UH 12A 8.45 MOHM SMD
DIODE ZENER 51V 800MW DO219AB
SFERNICE POTENTIOMETERS & TRIMME
TVS DIODE 58VWM 93.6VC DO214AC
Product Specifications:
MfrPart.: SIHB35N60EF-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 600V 32A D2PAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: BulkSeries: EFPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 32A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 97mOhm @ 17A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 134 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 2568 pF @ 100 VFETFeature: -PowerDissipation(Max): 250W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: D²PAK (TO-263)SIHB35N60EF-GE3 | Vishay | NHE Electronics
SIHB35N60EF-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.