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SIHD1K4N60E-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 4.2A TO252AA
Product Attributes：
Part Number: SIHD1K4N60E-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 600V 4.2A TO252AA
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHD1K4N60E-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIHD1K4N60E-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 600V 4.2A TO252AAProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: BulkSeries: EPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 4.2A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 1.45Ohm @ 500mA, 10VVgs(th)(Max)@Id: 5V @ 250µAGateCharge(Qg)(Max)@Vgs: 7.5 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 172 pF @ 100 VFETFeature: -PowerDissipation(Max): 63W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: TO-252AASIHD1K4N60E-GE3 | Vishay | NHE Electronics
SIHD1K4N60E-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
