Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIHD9N60E-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 9A DPAK
Product Attributes:
Part Number: SIHD9N60E-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 600V 9A DPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHD9N60E-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 9VWM 15.4VC DO204AC
BRIDGE RECT 1PHASE 800V 3.9A GBU
FIXED IND 120NH 1.53A 34 MOHM TH
TVS DIODE 22VWM 35.5VC DO218AB
THERMISTOR PTC 2.2K OHM 5% 1206
Product Specifications:
MfrPart.: SIHD9N60E-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 600V 9A DPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Cut Tape (CT)Series: EPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 368mOhm @ 4.5A, 10VVgs(th)(Max)@Id: 4.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 52 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 778 pF @ 100 VFETFeature: -PowerDissipation(Max): 78W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: TO-252AASIHD9N60E-GE3 | Vishay | NHE Electronics
SIHD9N60E-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.