Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIHH26N60E-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 25A PPAK 8 X 8
Product Attributes:
Part Number: SIHH26N60E-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 600V 25A PPAK 8 X 8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHH26N60E-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE ARRAY SCHOTTKY 60V TO3P
TVS DIODE 8.92VWM 16.2VC DO220AA
TRIMMER 5 OHM 0.25W PC PIN SIDE
MOSFET N-CH 50V 8.2A DPAK
FIXED IND 6.8UH 560MA 375MOHM TH
Product Specifications:
MfrPart.: SIHH26N60E-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 600V 25A PPAK 8 X 8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 25A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 135mOhm @ 13A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 116 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 2815 pF @ 100 VFETFeature: -PowerDissipation(Max): 202W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 8 x 8SIHH26N60E-T1-GE3 | Vishay | NHE Electronics
SIHH26N60E-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.