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SIHJ6N65E-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 650V 5.6A PPAK SO-8
Product Attributes：
Part Number: SIHJ6N65E-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 650V 5.6A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHJ6N65E-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIHJ6N65E-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 650V 5.6A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 650 VCurrent-ContinuousDrain(Id)@25°C: 5.6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 868mOhm @ 3A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 32 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 596 pF @ 100 VFETFeature: -PowerDissipation(Max): 74W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8 DualSIHJ6N65E-T1-GE3 | Vishay | NHE Electronics
SIHJ6N65E-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
