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SIHJ7N65E-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 650V 7.9A PPAK SO-8
Product Attributes：
Part Number: SIHJ7N65E-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 650V 7.9A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHJ7N65E-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIHJ7N65E-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 650V 7.9A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 650 VCurrent-ContinuousDrain(Id)@25°C: 7.9A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 598mOhm @ 3.5A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 44 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 820 pF @ 100 VFETFeature: -PowerDissipation(Max): 96W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIHJ7N65E-T1-GE3 | Vishay | NHE Electronics
SIHJ7N65E-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
