Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIHP11N80E-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 800V 12A TO220AB
Product Attributes：
Part Number: SIHP11N80E-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 800V 12A TO220AB
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIHP11N80E-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 180UH 111MA 5.72OHM SM
FIXED IND 120UH 150MA 3.6 OHM TH
SFERNICE POTENTIOMETERS & TRIMME
MOSFET P-CH 60V 18A TO220AB
TVS DIODE 43VWM 69.4VC DO214AB
Product Specifications：
MfrPart.: SIHP11N80E-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 800V 12A TO220ABProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: EPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 800 VCurrent-ContinuousDrain(Id)@25°C: 12A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 440mOhm @ 5.5A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 88 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 1670 pF @ 100 VFETFeature: -PowerDissipation(Max): 179W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Through HoleSupplierDevicePackage: TO-220ABSIHP11N80E-GE3 | Vishay | NHE Electronics
SIHP11N80E-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
