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    SIHU2N80E-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 800V 2.8A IPAK
    SIHU2N80E-GE3 Images
    SIHU2N80E-GE3 Images
    Product Attributes：
  • Part Number: SIHU2N80E-GE3
  • Manufacturer: Vishay
  • Description: MOSFET N-CH 800V 2.8A IPAK
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • SIHU2N80E-GE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SIHU2N80E-GE3
  • Mfr: Vishay Siliconix
  • Description: MOSFET N-CH 800V 2.8A IPAK
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: E
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 800 V
  • Current-ContinuousDrain(Id)@25°C: 2.8A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 2.75Ohm @ 1A, 10V
  • Vgs(th)(Max)@Id: 4V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 19.6 nC @ 10 V
  • Vgs(Max): ±30V
  • InputCapacitance(Ciss)(Max)@Vds: 315 pF @ 100 V
  • FETFeature: -
  • PowerDissipation(Max): 62.5W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Through Hole
  • SupplierDevicePackage: TO-251AA
  • SIHU2N80E-GE3 | Vishay | NHE Electronics
    • SIHU2N80E-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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