Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIJ186DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 60V 23A/79.4A PPAK
Product Attributes：
Part Number: SIJ186DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 60V 23A/79.4A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIJ186DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 50V 1A DO204AL
DIODE ZENER 12V 300MW SOT23
DIODE ZENER 3.3V 500MW SOD123
Product Specifications：
MfrPart.: SIJ186DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 60V 23A/79.4A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 23A (Ta), 79.4A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 4.5mOhm @ 15A, 10VVgs(th)(Max)@Id: 3.6V @ 250µAGateCharge(Qg)(Max)@Vgs: 37 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1710 pF @ 30 VFETFeature: -PowerDissipation(Max): 5W (Ta), 57W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIJ186DP-T1-GE3 | Vishay | NHE Electronics
SIJ186DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
