Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIJ800DP-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 40V 20A PPAK SO-8
Product Attributes：
Part Number: SIJ800DP-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 40V 20A PPAK SO-8
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIJ800DP-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
NTC CU 0.6 LD CODED 680R 5% 1E
FIXED IND 1.2UH 390MA 650MOHM SM
FIXED IND 1MH 30MA 40 OHM SMD
TVS DIODE 9VWM 15.4VC DO214AA
ADJUSTABLE INDUCTOR 1UH TH
DIODE ZENER 4.3V 500MW SOD80
Product Specifications：
MfrPart.: SIJ800DP-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 40V 20A PPAK SO-8Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 20A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 9.5mOhm @ 20A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 56 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2400 pF @ 20 VFETFeature: -PowerDissipation(Max): 4.2W (Ta), 35.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIJ800DP-T1-GE3 | Vishay | NHE Electronics
SIJ800DP-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
