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SIJH112E-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 23A/225A PPAK
Product Attributes：
Part Number: SIJH112E-T1-GE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 23A/225A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIJH112E-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIJH112E-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 23A/225A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 23A (Ta), 225A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): -RdsOn(Max)@IdVgs: 2.8mOhm @ 20A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 160 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 8050 pF @ 50 VFETFeature: -PowerDissipation(Max): 3.3W (Ta), 333W (Tc)OperatingTemperature: -55°C ~ 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® 8 x 8SIJH112E-T1-GE3 | Vishay | NHE Electronics
SIJH112E-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
