Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR108DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 100V 12.4A/45A PPAK
Product Attributes：
Part Number: SIR108DP-T1-RE3
Manufacturer: Vishay
Description: MOSFET N-CH 100V 12.4A/45A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR108DP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 12UH 1.5A 170 MOHM SMD
TVS DIODE 30VWM 48.4VC DO214AC
TVS DIODE 36.8VWM 59.3VC DO214AC
TVS DIODE 64VWM 103VC DO214AC
FIXED IND 220NH 21A 3.2 MOHM SMD
OPTOISOLATOR 5.3KV TRANS 8SMD
Product Specifications：
MfrPart.: SIR108DP-T1-RE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 100V 12.4A/45A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 100 VCurrent-ContinuousDrain(Id)@25°C: 12.4A (Ta), 45A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 13.5mOhm @ 10A, 10VVgs(th)(Max)@Id: 3.6V @ 250µAGateCharge(Qg)(Max)@Vgs: 41.5 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2060 pF @ 50 VFETFeature: -PowerDissipation(Max): 5W (Ta), 65.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR108DP-T1-RE3 | Vishay | NHE Electronics
SIR108DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
