Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR122DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 80V 16.7A/59.6A PPAK
Product Attributes:
Part Number: SIR122DP-T1-RE3
Manufacturer: Vishay
Description: MOSFET N-CH 80V 16.7A/59.6A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR122DP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 11.1VWM 18.2VC DO214AA
NTC CU 0.6 LD CODED 47K 3% 2E
DIODE ZENER 14V 500MW MINI MELF
TVS DIODE 5.8VWM 10.5VC SMC
OPTOISO 5.3KV 4CH DARL 16DIP
Product Specifications:
MfrPart.: SIR122DP-T1-RE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 80V 16.7A/59.6A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 16.7A (Ta), 59.6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 7.5V, 10VRdsOn(Max)@IdVgs: 7.4mOhm @ 10A, 10VVgs(th)(Max)@Id: 3.8V @ 250µAGateCharge(Qg)(Max)@Vgs: 44 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 1950 pF @ 40 VFETFeature: -PowerDissipation(Max): 5.2W (Ta), 65.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR122DP-T1-RE3 | Vishay | NHE Electronics
SIR122DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.