Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR122LDP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, N-CHANNEL 80-V (D-S) MOSFET POWE
Product Attributes：
Part Number: SIR122LDP-T1-RE3
Manufacturer: Vishay
Description: N-CHANNEL 80-V (D-S) MOSFET POWE
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR122LDP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 30VWM 48.4VC DO214AA
THERM NTC 350KOHM 4247K 0402
SFERNICE POTENTIOMETERS & TRIMME
DIODE GEN PURP 50V 6A DO203AA
DIODE ZENER 15V 500MW SOD80
TVS DIODE 200VWM 336VC SOD57
Product Specifications：
MfrPart.: SIR122LDP-T1-RE3Mfr: Vishay SiliconixDescription: N-CHANNEL 80-V (D-S) MOSFET POWEProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 80 VCurrent-ContinuousDrain(Id)@25°C: 17.2A (Ta), 62.3A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 7.35mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 52 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 2380 pF @ 40 VFETFeature: -PowerDissipation(Max): 5W (Ta), 65.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR122LDP-T1-RE3 | Vishay | NHE Electronics
SIR122LDP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
