Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SIR150DP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 45V 30.9A/110A PPAK
Product Attributes:
Part Number: SIR150DP-T1-RE3
Manufacturer: Vishay
Description: MOSFET N-CH 45V 30.9A/110A PPAK
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR150DP-T1-RE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FIXED IND 680NH 270MA 1.4OHM SMD
TRIMMER 2M OHM 0.5W PC PIN SIDE
DIODE GEN PURP 200V 8A TO263AB
DIODE ZENER 12V 1W DO214AC
DIODE ARRAY SCHOTTKY 45V 5A SMPD
DIODE ZENER 120V 1.25W DO214AC
Product Specifications:
MfrPart.: SIR150DP-T1-RE3Mfr: Vishay SiliconixDescription: MOSFET N-CH 45V 30.9A/110A PPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 45 VCurrent-ContinuousDrain(Id)@25°C: 30.9A (Ta), 110A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 2.71mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.3V @ 250µAGateCharge(Qg)(Max)@Vgs: 70 nC @ 10 VVgs(Max): +20V, -16VInputCapacitance(Ciss)(Max)@Vds: 4000 pF @ 20 VFETFeature: -PowerDissipation(Max): 5.2W (Ta), 65.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR150DP-T1-RE3 | Vishay | NHE Electronics
SIR150DP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.