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SIR182LDP-T1-RE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, N-CHANNEL 60-V (D-S) MOSFET POWE
Product Attributes：
Part Number: SIR182LDP-T1-RE3
Manufacturer: Vishay
Description: N-CHANNEL 60-V (D-S) MOSFET POWE
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SIR182LDP-T1-RE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SIR182LDP-T1-RE3Mfr: Vishay SiliconixDescription: N-CHANNEL 60-V (D-S) MOSFET POWEProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 60 VCurrent-ContinuousDrain(Id)@25°C: 31.7A (Ta), 130A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 2.75mOhm @ 15A, 10VVgs(th)(Max)@Id: 2.4V @ 250µAGateCharge(Qg)(Max)@Vgs: 84 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 3700 pF @ 30 VFETFeature: -PowerDissipation(Max): 5W (Ta), 83W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: PowerPAK® SO-8SIR182LDP-T1-RE3 | Vishay | NHE Electronics
SIR182LDP-T1-RE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
